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photocathodes à l'arséniure de gallium (GaAs) ou à l'arséniure de gallium-indium (GaInAs) ; ou	The optional gas drying device must have a minimal effect on the concentration of the measured gases.
des photocathodes semi-conducteurs "composés III-V" (par ex., GaAs ou GaInAs) et photocathodes à électrons transférés ;	All weighing systems shall be calibrated and sealed in accordance with national systems by the competent authorities of the Member State.
des photocathodes semi-conducteurs “composés III-V” (par exemple, GaAs ou GaInAs) et photocathodes à électrons transférés ayant une “sensibilité d’énergie radiante” maximale supérieure à 15 mA/W ;	“III/V compound” semiconductor (e.g. GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum “radiant sensitivity” exceeding 15 mA/W;
photocathodes à l'arséniure de gallium (GaAs) ou à l'arséniure de gallium-indium (GaInAs) ;	Where reference is made to this paragraph, Article 5a(1),(2),(4) and (6) and Article 7 of Decision 1999/468/EC shall apply, having regard to the provisions of Article 8 thereof.
photocathodes à l'arséniure de gallium (GaAs) ou à l'arséniure de gallium-indium (GaInAs) ;	Where reference is made to this paragraph, Article 5a(1), (2), (4) and (6) and Article 7 of Decision 1999/468/EC shall apply, having regard to the provisions of Article 8 thereof.
photocathodes à l'arséniure de gallium (GaAs) ou à l'arséniure de gallium-indium (GaInAs) ;	Where reference is made to this paragraph, Article 5a(1), (2), (4) and (6), and Article 7 of Decision 1999/468/EC shall apply, having regard to the provisions of Article 8 thereof.
des photocathodes à semi-conducteurs « composés III-V » (par ex., GaAs ou GaInAs) et photocathodes à électrons transférés ;	An average output power to mass ratio exceeding 80 W/kg; and
des photocathodes semi-conducteurs "composés III-V" (par ex., GaAs ou GaInAs) et photocathodes à électrons transférés ;	6 The consideration allocated to the award credits shall be measured by reference to their fair value.
des photocathodes à semi-conducteurs « composés III-V » (par ex., GaAs ou GaInAs) et photocathodes à électrons transférés ayant une « sensibilité d’énergie radiante » maximale supérieure à 15 mA/W ;	Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:
photocathodes à l'arséniure de gallium (GaAs) ou à l'arséniure de gallium-indium (GaInAs) ; ou	Where appropriate, the Commission shall submit proposals, and in the case of products of third country origin, bring the matter to the attention of the competent authority of the country or countries concerned requesting clarification as to the recurrent presence of residues.